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| 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm) 2SD1898 0.50.1 4.5+0.2 -0.1 1.60.1 1.5 +0.2 -0.1 4.00.3 2.5+0.2 -0.1 (1) 1.00.2 (2) (3) 0.40.1 1.50.1 0.4+0.1 -0.05 0.40.1 1.50.1 0.50.1 3.00.2 !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF (1) Base (2) Collector (3) Emitter 2SD1733 1.50.3 2SD1768S 40.2 20.2 30.2 6.50.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.50.1 5.5+0.3 -0.1 9.50.5 (15Min.) 0.9 1.5 0.75 0.9 0.650.1 2.5 0.45+0.15 -0.05 3Min. 0.550.1 2.30.2 2.30.2 1.00.2 5 2.5 +0.4 -0.1 0.5 +0.15 0.45 -0.05 (1) (2) (3) (1) (2) (3) ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base 2SD1863 6.80.2 2.50.2 2SD1381F 7.80.2 Front 3.3 3.20.2 10.80.2 4.40.2 Back 3.19 0.9 1.2 1.0 1.6 1.1 6.9 9.2 C0.7 0.65Max. 0.95 14.50.5 16.00.5 1.75 0.8 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 2.30.5 2.30.5 0.70.1 1.760.5 (1) (2) (3) ROHM : ATV (1) Emitter (2) Collector (3) Base ROHM : TO-126FP (1) Emitter (2) Collector (3) Base 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 100 80 5 1 2 0.5 2SD1898 2 1 PC 10 0.3 1 1.2 2SD1381F Junction temperature Storage temperature Tj Tstg 5 150 -55+150 2 Unit V V V A (DC) A (Pulse) 1 W 3 2SD1733 Collector power dissipation 2SD1768S 2SD1863 W (Tc=25C) W 2 W (Tc=25C) C C 1 Pw=20ms, duty=1 / 2 2 Printed circuit board 1.7mm thick, collector copper plating 1cm 3 When mounted on a 40x40x0.7mm ceramic board. or larger. !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current 2SD1863 2SD1733, 2SD1898 DC current transfer ratio 2SD1768S 2SD1381F Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob hFE Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. 100 80 5 - - 180 82 120 82 - - - Typ. - - - - - - - - - 0.15 100 20 Max. - - - 1 1 390 390 390 270 0.4 - - Unit V V V A A - - - - V MHz pF IC/IB=500mA/20mA VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz VCE=3V, IC=0.5A IC=50A IC=1mA IE=50A VCB=80V VEB=4V Conditions * Measured using pulse current 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors !Packaging specifications and hFE Package Code Type 2SD1898 2SD1733 2SD1768S 2SD1863 2SD1381F hFE PQR PQR QR R PQ - - - - - - - - - - Basic ordering unit (pieces) T100 1000 Taping TL 2500 - TP 5000 - - TV2 2500 - - - Bulk - 2000 - - - - hFE values are classified as follows : Item hFE P 82~180 Q 120~270 R 180~390 !Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) Ta=25C VCE=5V COLLECTOR CURRENT : IC (A) Ta=25C 1.0 0.8 0.6 0.4 1mA 0.2 0 0 IB=0mA 10 6mA 5mA 4mA 3mA 2mA DC CURRENT GAIN : hFE Ta=25C 100 1000 VCE=3V 1V 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V) 2 4 6 8 0 0 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY : fT (MHz) 500 200 100 50 20 10 5 2 1 2 5 10 20 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 10 100 1000 IC/IB=20/1 10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25C Ta=25C VCE=5V 1000 Ta=25C f=1MHz IE=0A Ic=0A 100 10 50 100 200 500 1000 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : -IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors 10 5 COLLECTOR CURRENT : IC (A) 2 1 500m 200m 100m 50m 20m 10m 5m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ic Max (Pulse) Pw DC Ta=25C Single non-repetitive pulse S 10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 Ic Max (Pulse) DC Ta=25C Single non-repetitive pulse 10 5 2 1 500m Ic Max (Pulse) DC Ta=45C Single non-repetitive pulse Pw =1 0m S 0m Pw 0 =1 =1 S 0m S Pw m 00 =1 m =8 Pw 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 s 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50100 200 5001000 2 5 10 20 50100200 500 1000 5 10 20 50 100 200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area (2SD1863) Fig.8 Safe operating area (2SD1898) Fig.9 Safe operating area (2SD1381F) |
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